STAP85050

PD20010-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs www.datasheet4u.com Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 10 W with 11 dB gain @ 2 GHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC european directive PowerSO-10RF (formed lead) Description The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E’s superior linearity performance makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). PowerSO-10RF (straight lead) Figure 1. Pin connection Source Gate Drain Table 1. Device summary Order codes PD20010-E PD20010S-E PD20010TR-E PD20010STR-E Packages PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) PowerSO-10RF (formed lead) PowerSO-10RF (straight lead) Rev 1 Packing Tube...