STAP57045

STAP57045 www.datasheet4u.com RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Preliminary Data Features ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 45 W with 13 dB gain @ 945 MHz / 28 V ST advanced PowerSO-10RF-STAP package Description The STAP57045 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. STAP57045 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP1 plastic RF power package. STAP package has been specially optimized for RF needs and offers excellent performances and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294) GATE SOURCE !- STAP1 !- Figure 1. Pin connection DRAIN Table 1. Device summary Order code STAP57045 Package STAP1 Packing Tube March 2009 Rev 1 1/17 www.st.com 17 This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. Contents STAP57045 Contents 1 www.datasheet4u.com Electrical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 1.1 1.2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....