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MRF6S18060NR1

Part Number	MRF6S18060NR1
Manufacturer	Freescale Semiconductor
Description	RF Power Field Effect Transistors
Published	Jun 10, 2009
Detailed Description	Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs ...
Datasheet	MRF6S18060NR1 PDF File

Overview

Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz.
Suitable for TDMA, CDMA, and multicarrier amplifier applications.
GSM Application • Typical GSM Performance: VDD = 26 Vdc, IDQ = 600 mA, Pout = 60 Watts CW, f = 1990 MHz Power Gain — 15 dB Drain Efficiency - 50% GSM EDGE Application • Typical GSM EDGE Performance: VDD = 26 Volts, IDQ = 450 mA, Pout = 25 Watts Avg.
, Full Frequency Band (1805- 1880 MHz or 1930- 1990 MHz) Power Gain — 15.
5 dB Spectral Regrowth @ 400 kHz Offset = - 62 dBc Spectral Regrowth @ 600 kHz Offset = - 76 dBc...

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