MRF19060SR3

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MRF19060/D The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1.9 to 2.0 GHz. Suitable for CDMA, TDMA, GSM and multicarrier amplifier www.datasheet4u.com applications. Typical CDMA Performance: 1960 MHz, 26 Volts IS–97 CDMA Pilot, Sync, Paging, Traffic Codes 8 Through 13 Output Power — 7.5 Watts Power Gain — 12.5 dB Adjacent Channel Power — 885 kHz: –47 dBc @ 30 kHz BW 1.25 MHz: –55 dBc @ 12.5 kHz BW 2.25 MHz: –55 dBc @ 1 MHz BW Internally Matched, Controlled Q, for Ease of Use High Gain, High Efficiency and High Linearity Integrated ESD Protection Designed for Maximum Gain and Insertion Phase Flatness Capable of Handling 10:1 VSWR, @ 26 Vdc, 1.93 GHz, 60 Watts CW Output Power Excellent Thermal Stability Characterized with Series Equivalent Large–Signal Impedance Parameters Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel. MRF19060 MRF19060R3 MRF19060SR3 1990 MHz, 60 W, 26 V LATERAL N–CHANNEL RF POWER MOSFETs CASE 465–06, STYLE 1 NI–780 MRF19060R3 CASE 465A–06, STYLE 1 NI–780S MRF19060SR3 MAXIMUM RATINGS Rating Drain–Source Voltage Gate–Source Voltage Total Device Dissipation @ TC ≥ = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value 65 –0.5, +15 180 1.03 –65 to +150 200 Unit Vdc Vdc Watt...