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MRF9080LR3 Dataheets PDF



Part Number MRF9080LR3
Manufacturers Freescale Semiconductor
Logo Freescale Semiconductor
Description RF Power Field Effect Transistors
Datasheet MRF9080LR3 DatasheetMRF9080LR3 Datasheet (PDF)

Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Effic.

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Freescale Semiconductor Technical Data MRF9080 Rev. 5, 12/2004 RF Power Field Effect Transistors N−Channel Enhancement−Mode Lateral MOSFETs Designed for GSM 900 MHz frequency band, the high gain and broadband performance of these devices make them ideal for large −signal, common − www.datasheet4u.com source amplifier applications in 26 volt base station equipment. • Typical Performance for GSM Frequencies, 921 to 960 MHz, 26 Volts Output Power @ P1db: 75 Watts Power Gain @ P1db: 18.5 dB Efficiency @ P1db: 55% • Internally Matched, Controlled Q, for Ease of Use • High Gain, High Efficiency and High Linearity • Integrated ESD Protection • Designed for Maximum Gain and Insertion Phase Flatness • Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 90 Watts CW Output Power • Excellent Thermal Stability • Characterized with Series Equivalent Large−Signal Impedance Parameters • Available with Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal. • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. MRF9080LR3 MRF9080LSR3 GSM 900 MHz FREQUENCY BAND, 75 W, 26 V LATERAL N−CHANNEL RF POWER MOSFETs CASE 465−06, STYLE 1 NI−780 MRF9080LR3 CASE 465A−06, STYLE 1 NI−780S MRF9080LSR3 Table 1. Maximum Ratings Rating Drain−Source Voltage Gate−Source Voltage Total Device Dissipation @ TC = 25°C Derate above 25°C Storage Temperature Range Operating Junction Temperature Symbol VDSS VGS PD Tstg TJ Value − 0.5, +65 − 0.5, +15 250 1.43 − 65 to +150 200 Unit Vdc Vdc W W/°C °C °C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RθJC Value 0.7 Unit °C/W Table 3. ESD Protection Characteristics Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum) NOTE − CAUTION − MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. © Freescale Semiconductor, Inc., 2004. All rights reserved. MRF9080LR3 MRF9080LSR3 5−1 Freescale Semiconductor Wireless RF Product Device Data Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0) Zero Gate Voltage Drain Leakage Current www.datasheet4u.com (VDS = 26 Vds, VGS = 0) Gate−Source Leakage Current (VGS = 5 Vdc, VDS = 0 ) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 300 µAdc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mAdc) Drain−Source On−Voltage (VGS = 10 Vdc, ID = 2 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 6 Adc) Dynamic Characteristics (1) Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Functional Tests (In Freescale Test Fixture, 50 ohm system) (2) Power Output, 1 dB Compression Point (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Common−Source Amplifier Power Gain @ 70 W (Min) (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ Pout = 70 W (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Drain Efficiency @ P1dB (VDD = 26 Vdc, IDQ = 600 mA, f = 921 and 960 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 70 W, IDQ = 600 mA, f = 921 and 960 MHz) Output Mismatch Stress (VDD = 26 Vdc, Pout = 90 W CW, IDQ = 600 mA, f = 921 MHz, VSWR = 5:1, All Phase Angles at Frequency of Tests) P1dB Gps η1 η2 IRL Ψ 68 17 47 — 9.5 75 18.5 52 55 12.5 — 20 — — — W dB % % dB Coss Crss — — 73 2.9 — — pF pF VGS(th) VGS(Q) VDS(on) gfs 2.0 — — — — 3.7 0.19 8.0 4.0 — 0.4 — Vdc Vdc Vdc S IDSS IDSS IGSS — — — — — — 10 1 1 µAdc µAdc µAdc Symbol Min Typ Max Unit No Degradation In Output Power Before and After Test 1. Part is internally input matched. 2. To meet application requirements, Freescale test fixtures are designed to cover full GSM 900 band ensuring batch to batch consistency MRF9080LR3 MRF9080LSR3 5−2 Freescale Semiconductor Wireless RF Product Device Data VGG R3 + C7 R2 C6 R1 C18 + VDD C17 C5 DUT C11 C12 C13 C15 C14 C16 RF OUTPUT www.datasheet4u.com RF INPUT C1 C2 C3 C4 C8 C9 C10 Figure 1. Broadband GSM 900 Test Circuit Schematic Table 5. Broadband GSM 900 Test Circuit Component Designations and Values Part C1 C2 C3 C4, C5, C9, C10, C12, C13 C6, C16, C17 C7, C18 C8, C11 C14 C15 R1, R2, R3 WB1, WB2 Raw PCB Material PCB Description 4.7 pF Chip Capacitor 2.7 pF Chip Capacitor 1.5 pF Chip Capacitor 5.6 pF Chip Capacitors 22 pF Chip Capacitors 10 µF, 35 V Tantalum Chip Capacitors 10 pF Chip Capacitors 0.8 pF Chip Capacitor 8.2 pF Chip Capacitor 1.0 kΩ, 1/8 W Chip Resistors (0805) Beryllium Copper Wear Blocks 30 mil Glass Teflon®, εr = 2.55 Etched Circuit Board 0.004″ x 0.210″ x 0.520″ TLX8−0300 C−GY−00−001−02 Taconic Cibel Part Number 100B4R7BW 100B2R7BW 100B1R5BW 100B5R6CW 100B220GW 293D106X9035D2T 100B100JW 100B0R8BW 100B8R2GW Manufacturer ATC ATC ATC ATC ATC Sprague−Vishay ATC ATC ATC MRF9080LR3 MRF9080LSR3 Freescale Semiconductor Wireless RF Product Device Data 5−3 C7 C18 R3 R2 C6 C17 VGG .


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