BLL6H0514-25

BLL6H0514-25 LDMOS driver transistor Rev. 02 — 17 March 2009 www.datasheet4u.com Objective data sheet 1. Product profile 1.1 General description 25 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information Typical RF performance at Tcase = 25 °C; IDq = 50 mA; in a class-AB application circuit. Mode of operation pulsed RF f (MHz) 960 to 1215 1200 to 1400 tp (µs) 128 300 δ (%) 10 10 VDS (V) 50 50 PL (W) 25 25 Gp (dB) 21 19 RLin (dB) 10 10 ηD (%) 58 50 Pdroop(pulse) (dB) 0.05 0.05 tr (ns) 8 8 tf (ns) 6 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I I Easy power control Integrated ESD protection High flexibility with respect to pulse formats Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation (0.5 GHz to 1.4 GHz) Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications I Amplifiers for pulsed applications in the 0.5 GHz to 1.4 GHz frequency range NXP Semiconductors BLL6H0514-25 LDMOS driver transistor 2. Pinning information www.datasheet4u.com Table 2. Pin 1 2 3 Pinning Description drain gate source [1] Simplified outline 1 3 2 Graphic symbol 1 2 3 sym112 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Package Name BLL6H0514-25 Description flanged LDMOST ceramic package; 2 mountin...