RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Description
DB-55008L-450
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RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
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Excellent thermal stability Frequency: 318 - 450 MHz Supply voltage: 13.6 V Output power: 8 W Power gain: 14.6 ± 0.6 dB Efficiency: 52 % - 73 % BeO free amplifier
Description
The DB-55008L-450 is a c...