IXTQ100N25P

PolarHTTM Power MOSFET IXTK 100N25P IXTQ 100N25P IXTT 100N25P N-Channel Enhancement Mode Avalanche Rated V= DSS ID25 = ≤ RDS(on) 250 V 100 A 27 mΩ Symbol Test Conditions Maximum Ratings TO-264 (IXTK) V DSS VDGR VGSS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight T J = 25° C to 150° C TJ = 25° C to 150° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque TO-3P TO-264 TO-268 250 V 250 V ±20 V ±30 V 100 A 75 A 250 A 60 A 60 mJ 2.0 J 10 V/ns 600 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 5.5 g 10 g 5.0 g Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BV DSS V GS = 0 V, I D = 250 µA Characteristic Values Min. Typ. Max. 250 V VGS(th) VDS = VGS, ID = 250µA 2.5 5.0 V IGSS VGS = ±20 VDC, VDS = 0 ±100 nA IDSS VDS = VDSS VGS = 0 V TJ = 125° C 25 µA 250 µA RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % 27 m Ω G DS TO-3P (IXTQ) D (TAB) G DS TO-268 (IXTT) (TAB) G S D (TAB) G = Gate S = Source D = Drain TAB = Drain Features l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - ea...