EM28C1602C3FL

NanoAmp Solutions, Inc. 1982 Zanker Road, San Jose, CA 95112 ph: 408-573-8878, FAX: 408-573-8877 www.nanoamp.com EM28C1602C3FL Advance Information EM28C1602C3FL Low Voltage, Extended Temperature FLASH AND SRAM COMBO MEMORY www.datasheet4u.com FEATURES Organization: 1,048K x 16 (Flash) 128K x 16 (SRAM) Basic configuration: Flash Thirty-nine erase blocks – Eight 4K-word parameter blocks – Thirty-one 32K-word main memory blocks SRAM 2Mb SRAM for data storage – 128K-words F_VCC, F_VPP, S_VCC voltages 2.7V (MIN)/3.3V (MAX) F_VCC read voltage 2.7V (MIN)/3.3V (MAX) S_VCC read voltage 1.8V (TYP) F_VPP (in-system PROGRAM/ERASE) 12V ±5% (HV) F_VPP (production programming compatibility) 1.0V (MIN) S_VCC (SRAM data retention) Asynchronous access time Flash access time: 90ns @ 2.7V F_VCC SRAM access time: 85ns @ 2.7V S_VCC Low power consumption Enhanced WRITE/ERASE suspend option Read/Write SRAM during program/erase of Flash 128-bit chip OTP protection register for security purposes Cross-compatible command set support PROGRAM/ERASE cycles 100,000 WRITE/ERASE cycles per block BALL ASSIGNMENT 66-Ball FBGA (Top View) 1 A B C D E F G H NC 2 NC 3 NC 4 A11 5 A15 6 A14 7 A13 8 A12 9 F_Vss 10 NC 11 NC 12 NC A16 A8 A10 A9 DQ15 S_W E# DQ14 DQ7 F_WE # NC DQ13 DQ6 DQ4 DQ5 S_Vss F_RP# DQ12 S_CE2 S_Vcc F_Vcc F_WP # F_Vpp A19 DQ11 DQ10 DQ2 DQ3 S_L B# S_UB# S_OE # DQ9 DQ8 DQ0 DQ1 A18 A17 A7 A6 A3 A2 A1 S_CE1# NC NC NC ...