Document
Ordering number:ENN2063A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1143/2SD1683
50V/4A Switching Applications
www.datasheet4u.com
Applications
· Voltage regulators, relay drivers, lamp drivers, electrical equipment.
Package Dimensions
unit:mm 2042B
[2SB1143/2SD1683]
8.0 1.0
Features
· Adoption of FBET, MBIT processes. · Low saturation voltage. · Large current capacity and wide ASO.
1.6 0.8
1.4
4.0 1.0
3.3
3.0
1.5
3.0
0.8 0.75
7.5
15.5
11.0
0.7
1
2
3
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
4.8
Conditions
1.7
( ) : 2SB1143
2.4
1 : Emitter 2 : Collector 3 : Base SANYO : TO-126ML
Ratings (–)60 (–)50 (–)6 (–)4 (–)6 1.5 10 150 –55 to +150
Unit V V V A A W W ˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE1 hFE2 fT VCB=(–)40V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)100mA VCE=(–)2V, IC=(–)3A VCE=(–)10V, IC=(–)50mA 100* 40 150 MHz Conditions Ratings min typ max (–)1 (–)1 560* Unit µA µA
* ; The 2SB1143/2SD1683 are classified by 100mA hFE as follows :
Rank hFE R 100 to 200 S 140 to 280 T 200 to 400 U 280 to 560
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O2003TN (KOTO)/92098HA (KT)/4137KI/D176TA, TS No.2063–1/4
2SB1143/2SD1683
Continued from preceding page.
Parameter Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage www.datasheet4u.com Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol Cob VCE(sat) VBE(sat) Conditions VCB=(–)10V, f=1MHz IC=(–)2A, IB=(–)100mA Ratings min typ (39)25 (–350) 190 (–)0.94 (–)60 (–)50 (–)6 (70)70 (450) 650 (30)35 (–700) 500 (–)1.2 max Unit pF mV mV V V V V ns ns ns ns
IC=(–)2A, IB=(–)100mA V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IE=(–)10µA, IC=0 ton tstg tf See specified Test Circuit See specified Test Circuit See specified Test Circuit
Switching Time Test Circuit
PW=20µs D.C.≤1% INPUT IB1 OUTPUT IB2 VR 50Ω + 100µF VBE= --5V + 470µF VCC=25V RB
RL 25Ω
IC=10IB1= --10IB2=1A (For PNP, the porarity is reversed.)
--5
IC -- VCE
2SB1143
5
IC -- VCE
2SD1683
0 --20
mA
--100
Collector Current, IC – A
Collector Current, IC – A
--4
mA
4
A 100m 80mA 60mA
--3
--50mA
--20mA
--10mA
40mA
3
20mA
2
--2
10mA
5mA
--1
--5mA
1
0 0 --0.4 --0.8 --1.2
IB=0
--1.6 --2.0 ITR09047
0 0 0.4 0.8 1.2
IB=0
1.6 2.0 ITR09048
Collector-to-Emitter Voltage, VCE – V
--2.0
Collector-to-Emitter Voltage, VCE – V
2.0
IC -- VCE
--14 mA
--12m A
2SB1143
IC -- VCE
8mA
2SD1683
Collector Current, IC – A
--8mA
--1.2
Collector Current, IC – A
--1.6
--10mA
7mA
1.6
6mA
1.2
--6mA
5mA
4mA
0.8
--4mA
--0.8
3mA 2mA
--2mA
--0.4
0.4
1mA
0 0 --4 --8 --12
IB=0
--16 --20 ITR09049
0 0 4 8 12
IB=0
16 20 ITR09050
Collector-to-Emitter Voltage, VCE – V
Collector-to-Emitter Voltage, VCE – V
No.2063–2/4
2SB1143/2SD1683
--4.8
IC -- VBE
2SB1143 VCE= --2V
4.8
IC -- VBE
2SD1683 VCE=2V
--4.0
4.0
Collector Current, IC – A
--3.2
Collector Current, IC – A
3.2
www.datasheet4u.com --2.4
2.4
--1.6
1.6
--0.8
Ta= 75 25° °C --25 C °C
0.8
0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4
0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V
1000 7 5
ITR09051 1000 7 5
Base-to-Emitter Voltage, VBE – V
Ta= 75 25° °C C --25 °C
ITR09052
hFE -- IC
2SB1143 VCE= --2V
Ta=75°C 25°C --25°C
hFE -- IC
2SD1683 VCE=2V
Ta=75°C
DC Current Gain, hFE
2
DC Current Gain, hFE
3
3 2
25°C
100 7 5 3 2 10 7 --0.01 2 3 5
100 7 5 3 2 10
--25°C
Collector Current, IC – A
7 --0.1
2
3
5
7 --1.0
2
3
5
7 0.01
2
3
5
ITR09053 5 3 2
Collector Current, IC – A
7 0.1
2
3
5
7 1.0
2
3
5
ITR09054
1000
f T -- IC
2SB1143 / 2SD1683 VCE=10V
Cob -- VCB
2SB1143 / 2SD.