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LET9130

RF POWER TRANSISTORS Ldmos Enhanced Technology

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LET9130 RF POWER TRANSISTORS Ldmos Enhanced Technology PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-95 CDMA: 865-895 MHz / 28 V POUT = 25 W EFF. = 29 % EDGE: 920-960 MHz / 28 V POUT = 45 W EFF. = 38 % GSM: 920-960 MHz / 28 V POUT = 135 W EFF. = 51 % EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT MATCHING ESD PROT...

STMicroelectronics

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