SUP18N15-95

SUP18N15-95 New Product Vishay Siliconix N-Channel 150-V (D-S) 175_C MOSFET www.datasheet4u.com FEATURES rDS(on) (W) 0.095 @ VGS = 10 V PRODUCT SUMMARY VDS (V) 150 ID (A) 18 17.5 D TrenchFETr Power MOSFETS D 175_C Junction Temperature APPLICATIONS D 42-V Automotive Bus 0.100 @ VGS = 6 V TO-220AB D G DRAIN connected to TAB G D S Top View S N-Channel MOSFET SUP18N15-95 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa L = 0.1 mH TC = 25_C TC = 25_C TC = 125_C ID IDM IAR EAR PD TJ, Tstg Symbol VDS VGS Limit 150 "20 18 10.3 25 15 16.2 88b –55 to 175 Unit V A mJ W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (Free Air) Junction-to-Case Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. Document Number: 71642 S-04093—Rev. A, 25-Jun-01 www.vishay.com Symbol RthJA RthJC Limit 85 1.7 Unit _C/W 1 SUP18N15-95 Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) www.datasheet4u.com Parameter Symbol Test Condition Min Typa Max Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 120 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS...