LET9006
RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERA...
LET9006
RF POWER
TRANSISTORS Ldmos Enhanced Technology in Plastic Package
TARGET DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs
EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 6 W with 17 dB gain @ 960 MHz / 26V NEW LEADLESS PLASTIC PACKAGE ESD PROTECTION SUPPLIED IN TAPE & REEL OF 3K UNITS
PowerFLAT™(5x5) ORDER CODE LET9006 BRANDING 9006
DESCRIPTION The LET9006 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 26 V in common source mode at frequencies up to 1 GHz. LET9006 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the innovative leadless SMD plastic package, PowerFLAT™. It is ideal for digital cellular BTS applications requiring high linearity.
PIN CONNECTION
TOP VIEW
ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C)
Symbol V(BR)DSS VGS ID PDISS Tj TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70°C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 -0.5 to +15 1 16 150 -65 to +150 Unit V V A W °C °C
THERMAL DATA
Rth(j-c) Junction -Case Thermal Resistance 5 °C/W
April, 15 2003
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LET9006
ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC
Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) gFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditio...