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LET21008

Part Number	LET21008
Manufacturer	STMicroelectronics
Description	RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package
Published	Mar 22, 2005
Detailed Description	LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 ...
Datasheet	LET21008 PDF File

Overview

LET21008 RF POWER TRANSISTORS Ldmos Enhanced Technology in Plastic Package TARGET DATA Designed for GSM / EDGE / IS-97 / WCDMA applications • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 11 dB gain @ 2170 MHz / 26V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION PowerFLAT™(5x5) ORDER CODE LET21008 BRANDING 21008 DESCRIPTION The LET21008 is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broad band commercial and industrial applications.
It operates at 26 V in common source mode at frequencies up to 2.
1 GHz.
LET21008 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS te...

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