LET20030C

LET20030C RF POWER TRANSISTORS Ldmos Enhanced Technology TARGET DATA Designed for GSM / EDGE / IS-97 applications IS-97 CDMA PERFORMANCES POUT = 4.5 W EFF. = 17 % EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 30 W with 11 dB gain @ 2000 MHz ESD PROTECTION ORDER CODE LET20030C M243 epoxy sealed BRANDING LET20030C DESCRIPTION The LET20030C is a common source N-Channel enhancement-mode lateral Field-Effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2.0 GHz. The LET20030C is designed for high gain and broadband performance operating in common source mode at 26 V. It is ideal for base station applications requiring high linearity. PIN CONNECTION 1 3 2 1. Drain 2. Gate 3. Source ABSOLUTE MAXIMUM RATINGS (TCASE = 25 °C) Symbol V(BR)DSS VDGR VGS ID PDISS Tj TSTG Drain-Source Voltage Drain-Gate Voltage (RGS = 1 MΩ) Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 °C) Max. Operating Junction Temperature Storage Temperature Parameter Value 65 65 -0.5 to +15 4 65 200 -65 to +200 Unit V V V A W °C °C THERMAL DATA (TCASE = 70 °C) Rth(j-c) Junction -Case Thermal Resistance 2.0 °C/W 1/5 January, 24 2003 LET20030C ELECTRICAL SPECIFICATION (TCASE = 25 °C) STATIC Symbol V(BR)DSS IDSS IGSS VGS(Q) VDS(ON) GFS CISS COSS CRSS VGS = 0 V VGS = 0 V VGS = 5 V VDS = 26 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Test Conditions IDS = 1 mA VDS = 26 V VDS = 0 V ID = TBD ID = 1 A ID = 1 ...