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LET19060C
RF POWER TRANSISTORS Ldmos Enhanced Technology
Description
LET19060C RF POWER
TRANSISTOR
S Ldmos Enhanced Technology TARGET DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs IS-97 CDMA PERFORMANCES POUT = 7.5 W EFF. = 18 % EDGE PERFORMANCES POUT = 30 W EFF. = 25 % GSM PERFORMANCES POUT = 65 W EFF. = 45 % EXCELLENT THERMAL STABILITY BeO FREE PACKAGE INTERNAL INPUT/OUTPUT MATCHING ESD PROTECTION PIN CONNEC...
STMicroelectronics
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LET19060C
RF POWER TRANSISTORS Ldmos Enhanced Technology
- STMicroelectronics
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