STL28NF3LL

STL28NF3LL www.datasheet4u.com N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA VDSS 30 V RDS(on) < 0.0065 Ω ID 28 A TYPE STL28NF3LL s s s TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE DESCRIPTION This Power MOSFET is the second generation of STMicroelectronics unique “STripFET™” technology. The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT™ package allows a significant reduction in board space without compromising performance. PowerFLAT™(5x5) (Chip Scale Package) INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS DC-DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(#) IDM ( ) PTOT EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 ± 16 28 17.5 112 80 0.64 2 –55 to 150 (1) Starting Tj = 25°C, ID = 14A, VDD = 18V Unit V V V A A A W W/°C J °C (q ) Pulse width limited by safe operating area (#) Limited by Wire Bonding November 2002 1/6 STL28NF3LL THERMAL DATA Rthj-case Rthj-pcb (#) Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.56 31.2 °C/W °C/W (*) When mounted on 1inch² FR4 Board, 2oz of Cu, t ≤ 10 ...