K3150

2SK3150(L), 2SK3150(S) Silicon N Channel MOS FET High Speed Power Switching www.datasheet4u.com ADE-208-750A (Z) 2nd. Edition February 1999 Features Low on-resistance R DS = 45 mΩ typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S 2SK3150(L),2SK3150(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current www.datasheet4u.com Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 100 ±20 20 60 20 20 40 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Electrical Characteristics (Ta = 25°C) Item Symbol Min 100 ±20 — — 1.0 — — 8.5 — — — — — — — — — Typ — — — — — 45 65 15 900 400 210 15 120 200 150 0.9 90 Max — — ±10 10 2.5 60 85 — — — — — — — — — — Unit V V µA µA V mΩ mΩ S pF pF pF ns ns ns ns V ns I F = 20 A, VGS = 0 I F = 20 A, VGS = 0 diF/ dt = 50A/ µs Test Conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 100 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 10 A, VGS = 10 VNote4 I D = 10 A, VGS = 4 V Note4 I D = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz I D = 10 A, VGS = 10 V RL = 3 Ω Drain to sourc...