LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
General Purpose Transistors
LBCW68GLT1G
3
1 2
PNP Silicon
We declare t...
LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
General Purpose
Transistors
LBCW68GLT1G
3
1 2
PNP Silicon
We declare that the material of product compliance with RoHS requirements.
ORDERING INFORMATION
Device LBCW68GLT1G LBCW68GLT3G Marking DG DG Shipping 3000/Tape&Reel 10000/Tape&Reel
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V V V
CEO CBO EBO
CASE 318–08, STYLE 6 SOT–23 (TO–236AB)
Value – 45 – 60 – 5.0 – 800
Unit Vdc Vdc Vdc mAdc
1 BASE 3 COLLECTOR
IC
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.8 RθJA PD 556 300 2.4 RθJA TJ , Tstg 417 –55 to +150 Unit mW mW/°C °C/W mW mW/°C °C/W °C
2 EMITTER
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) Collector Cutoff Current (VCE = –45 Vdc, I E= 0 ) (VCE = –45 Vdc, I B= 0 , TA = 150°C) Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. I E...