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LBC85XBDW1T1G Dataheets PDF



Part Number LBC85XBDW1T1G
Manufacturers Leshan Radio Company
Logo Leshan Radio Company
Description Dual General Purpose Transistors
Datasheet LBC85XBDW1T1G DatasheetLBC85XBDW1T1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. LBC85XBDW1T1G 6 5 4 1 2 3 • Device Marking: LBC856BDW1T1G= 3B LBC857BDW1T1G= 3F LBC857CDW1T1G= 3G LBC858BDW1T1G= 3K LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Collector–E.

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LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors www.datasheet4u.com These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements. LBC85XBDW1T1G 6 5 4 1 2 3 • Device Marking: LBC856BDW1T1G= 3B LBC857BDW1T1G= 3F LBC857CDW1T1G= 3G LBC858BDW1T1G= 3K LBC858CDW1T1G = 3L MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc (4) (3) SOT-363 (2) (1) Q1 Q2 (5) (6) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR–5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW DEVICE MARKING See Table 3.0 RqJA TJ, Tstg 328 –55 to +150 mW/°C °C/W °C ORDERING INFORMATION Device LBC85XBDW1T1G LBC85XBDW1T3G Shipping 3000/Tape & Reel 10000/Tape & Reel 1/6 LESHAN RADIO COMPANY, LTD. www.datasheet4u.com LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series V(BR)CBO LBC856 Series LBC857 Series LBC858 Series V(BR)EBO LBC856 Series LBC857 Series LBC858 Series ICBO –5.0 –5.0 –5.0 – – – – – – – – – – –15 –4.0 nA µA –80 –50 –30 – – – – – – V V(BR)CEO –65 –45 –30 V(BR)CES –80 –50 –30 – – – – – – V – – – – – – V V Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = –10 mA) Emitter–Base Breakdown Voltage (IE = –1.0 mA) Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C) ON CHARACTERISTICS DC Current Gain (IC = –10 µA, VCE = –5.0 V) hFE LBC856B, LBC857B, LBC858B LBC857C, LBC858C LBC856B, LBC857B, LBC858B LBC857C, LBC858C VCE(sat) – – VBE(sat) – – VBE(on) –0.6 – – – –0.75 –0.82 –0.7 –0.9 – – V – – –0.3 –0.65 V – – 220 420 150 270 290 520 – – 475 800 V – (IC = –2.0 mA, VCE = –5.0 V) Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V) SMALL–SIGNAL CHARACTERISTICS Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 – – – – – – 4.5 10 MHz pF dB 2/6 LESHAN RADIO COMPANY, LTD. LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G www.datasheet4u.com TYPICAL CHARACTERISTICS – LBC856 -1.0 hFE , DC CURRENT GAIN (NORMALIZED) VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS) TJ = 25°C -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = -5.0 V Figure 1. DC Current Gain -2.0 -1.6 -1.2 -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2 Figure 2. “On” Voltage VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) θVB, TEMPERATURE COEFFICIENT (mV/ °C) θVB for VBE -55°C to 125°C -0.5 -1.0 -50 -5.0 -10 -20 -2.0 IC, COLLECTOR CURRENT (mA) -100 -200 Figure 3. Collector Saturation Region Figure 4. Base–Emitter Temperature Coefficient fă, T CURRENT-GAIN - BANDWIDTH PRODUCT 40 TJ = 25°C Cib 500 200 100 50 20 VCE = -5.0 V C, CAPACITANCE (pF) 20 10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob -0.5 -5.0 -10 -20 -1.0 -2.0 VR, REVERSE VOLTAGE (VOLTS) -50 -100 -100 -1.0 -10 IC, COLLECTOR CURRENT (mA) Figure 5. Capacitance Figure 6. Current–Gain – Bandwidth Product 3/6 LESHAN RADIO COMP ANY, LTD. LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G www.datasheet4u.com 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS) TYPICAL CHARACTERISTICS – LBC857/LBC858 -1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 0 -0.1 -0.2 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10 0.3 0.2 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc) -100 -200 Figure 7. Normalized DC Current Gain -2.0 TA = 25°C -1.6 -1.2 -0.8 -0.4 0 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 1.0 θVB , TEMPERATURE COEFFICIENT (m.


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