Document
LESHAN RADIO COMPANY, LTD.
Dual General Purpose Transistors www.datasheet4u.com
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
LBC85XBDW1T1G
6 5 4
1 2 3
• Device Marking:
LBC856BDW1T1G= 3B LBC857BDW1T1G= 3F LBC857CDW1T1G= 3G LBC858BDW1T1G= 3K LBC858CDW1T1G = 3L
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current – Continuous Symbol VCEO VCBO VEBO IC BC856 –65 –80 –5.0 –100 BC857 –45 –50 –5.0 –100 BC858 –30 –30 –5.0 –100 Unit V V V mAdc (4) (3)
SOT-363
(2) (1)
Q1 Q2
(5)
(6)
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation Per Device FR–5 Board (Note 1.) TA = 25°C Derate Above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Range 1. FR–5 = 1.0 x 0.75 x 0.062 in Symbol PD Max 380 250 Unit mW
DEVICE MARKING
See Table 3.0 RqJA TJ, Tstg 328 –55 to +150 mW/°C °C/W °C
ORDERING INFORMATION
Device
LBC85XBDW1T1G LBC85XBDW1T3G
Shipping
3000/Tape & Reel 10000/Tape & Reel
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LESHAN RADIO COMPANY, LTD.
www.datasheet4u.com
LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA) LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series V(BR)CBO LBC856 Series LBC857 Series LBC858 Series V(BR)EBO LBC856 Series LBC857 Series LBC858 Series ICBO –5.0 –5.0 –5.0 – – – – – – – – – – –15 –4.0 nA µA –80 –50 –30 – – – – – – V V(BR)CEO –65 –45 –30 V(BR)CES –80 –50 –30 – – – – – – V – – – – – – V V
Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0)
Collector–Base Breakdown Voltage (IC = –10 mA)
Emitter–Base Breakdown Voltage (IE = –1.0 mA)
Collector Cutoff Current (VCB = –30 V) Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain (IC = –10 µA, VCE = –5.0 V) hFE LBC856B, LBC857B, LBC858B LBC857C, LBC858C LBC856B, LBC857B, LBC858B LBC857C, LBC858C VCE(sat) – – VBE(sat) – – VBE(on) –0.6 – – – –0.75 –0.82 –0.7 –0.9 – – V – – –0.3 –0.65 V – – 220 420 150 270 290 520 – – 475 800 V –
(IC = –2.0 mA, VCE = –5.0 V)
Collector–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter Saturation Voltage (IC = –10 mA, IB = –0.5 mA) (IC = –100 mA, IB = –5.0 mA) Base–Emitter On Voltage (IC = –2.0 mA, VCE = –5.0 V) (IC = –10 mA, VCE = –5.0 V)
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product (IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = –10 V, f = 1.0 MHz) Noise Figure (IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) fT Cob NF 100 – – – – – – 4.5 10 MHz pF dB
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LESHAN RADIO COMPANY, LTD.
LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G
www.datasheet4u.com
TYPICAL CHARACTERISTICS – LBC856
-1.0
hFE , DC CURRENT GAIN (NORMALIZED)
VCE = -5.0 V TA = 25°C 2.0 1.0 0.5 0.2 -0.1 -0.2 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 IC, COLLECTOR CURRENT (AMP) V, VOLTAGE (VOLTS)
TJ = 25°C -0.8 -0.6 -0.4 -0.2 VCE(sat) @ IC/IB = 10 0 -0.2 -0.5 -50 -100 -200 -5.0 -10 -20 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) VBE(sat) @ IC/IB = 10 VBE @ VCE = -5.0 V
Figure 1. DC Current Gain
-2.0 -1.6 -1.2 -0.8 -0.4 TJ = 25°C 0 -0.02 -0.05 -0.1 -0.2 -0.5 -1.0 -2.0 IB, BASE CURRENT (mA) -5.0 -10 -20 IC = -10 mA -20 mA -50 mA -100 mA -200 mA -1.0 -1.4 -1.8 -2.2 -2.6 -3.0 -0.2
Figure 2. “On” Voltage
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
θVB for VBE
-55°C to 125°C
-0.5 -1.0
-50 -5.0 -10 -20 -2.0 IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 3. Collector Saturation Region
Figure 4. Base–Emitter Temperature Coefficient
fă, T CURRENT-GAIN - BANDWIDTH PRODUCT
40 TJ = 25°C Cib
500 200 100 50 20
VCE = -5.0 V
C, CAPACITANCE (pF)
20
10 8.0 6.0 4.0 2.0 -0.1 -0.2 Cob
-0.5
-5.0 -10 -20 -1.0 -2.0 VR, REVERSE VOLTAGE (VOLTS)
-50 -100
-100 -1.0 -10 IC, COLLECTOR CURRENT (mA)
Figure 5. Capacitance
Figure 6. Current–Gain – Bandwidth Product
3/6
LESHAN RADIO COMP ANY, LTD.
LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G, L BC858BDW1T1G, L BC858CDW1T1G
www.datasheet4u.com 2.0 hFE , NORMALIZED DC CURRENT GAIN 1.5 1.0 0.7 0.5 VCE = -10 V TA = 25°C V, VOLTAGE (VOLTS)
TYPICAL CHARACTERISTICS – LBC857/LBC858
-1.0 -0.9 -0.8 -0.7 -0.6 -0.5 -0.4 -0.3 -0.2 -0.1 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mAdc) -50 -100 0 -0.1 -0.2 VBE(on) @ VCE = -10 V TA = 25°C VBE(sat) @ IC/IB = 10
0.3 0.2 -0.2
-0.5 -1.0 -2.0 -5.0 -10 -20 -50 IC, COLLECTOR CURRENT (mAdc)
-100 -200
Figure 7. Normalized DC Current Gain
-2.0 TA = 25°C -1.6 -1.2 -0.8 -0.4 0 IC = -10 mA IC = -50 mA IC = -20 mA IC = -200 mA IC = -100 mA 1.0 θVB , TEMPERATURE COEFFICIENT (m.