Document
LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
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PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount applications.
LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1 CWT1
3
Features
Pb– Free Package May be Available. The G.Suffix Denotes a Pb– Free Lead Finish
MAXIMUM RATINGS
Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous Symbol V CEO V CBO V
EBO
BC856 –65 –80 –5.0 –100
BC857 –45 –50 –5.0 –100
BC858 –30 –30 –5.0 –100
Unit V V V mAdc
1 2
SOT– 323 / SC-70
IC
3 COLLECTOR
THERMAL CHARACTERISTICS
Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD R θJA T J , T stg Max 150 833 –55 to +150 Unit mW °C/W °C
2 EMITTER 1 BASE
DEVICE MARKING
LBC856AWT1 = 3A; LBC856BWT1 = 3B; LBC857AWT1 = 3E; LBC857BWT1 = 3F; LBC858AWT1 = 3J; LBC858BWT1 = 3K; LBC858CWT1 = 3L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage (IC = –10 mA) Collector–Emitter Breakdown Voltage (IC = –10 µA, VEB = 0) Collector–Base Breakdown Voltage (IC = – 10 µA) Emitter–Base Breakdown Voltage (IE = – 1.0 µA)
LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series LBC856 Series LBC857 Series LBC858 Series
V
(BR)CEO
V (BR)CES
V
(BR)CBO
V
(BR)EBO
Collector Cutoff Current (VCB = – 30 V) (VCB = – 30 V, TA = 150°C) 1.FR–5=1.0 x 0.75 x 0.062in
I CBO
– 65 – 45 – 30 – 80 – 50 – 30 – 80 – 50 – 30 – 5.0 – 5.0 – 5.0 — —
— — — — — — — — — — — — — —
— — — — — — — — — — — — – 15 – 4.0
v
v
v
v nA µA
K6–1/6
LESHAN RADIO COMPANY, LTD.
LBC856AWT1, BWT1 LBC857AWT1, BWT1 LBC858AWT1, BWT1, CWT1
www.datasheet4u.com
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain (I C = –10 µA, V CE = –5.0 V) (I C = –2.0 mA, V CE = –5.0 V)
LBC856A, LBC857A, LBC858A LBC856B,LBC857B, LBC858B LBC858C, LBC856A, LBC857A, LBC858A LBC856B,LBC857B, LBC858B LBC858C,
h FE
Collector–Emitter Saturation Voltage (I C = –10 mA, I B = – 0.5 mA) Collector–Emitter Saturation Voltage (I C = –100 mA, I B = – 5.0 mA) Base–Emitter Saturation Voltage (I C = –10 mA, I B = –0.5 mA) Base–Emitter Saturation Voltage (I C = –100 mA, I B = –5.0 mA) Base–Emitter Voltage (I C = –2.0 mA, V CE = –5.0 V) Base–Emitter Voltage (I C = –10 mA, V CE = –5.0 V)
V V V
CE(sat)
BE(sat)
BE(on)
— — — 125 220 420 — — — — – 0.6 —
90 150 270 180 290 520 — — – 0.7 – 0.9 — —
— — — 250 475 800 – 0.3 – 0.65 — — – 0.75 – 0.82
—
V V V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product (I C = – 10 mA, V CE = – 5.0 Vdc, f = 100 MHz) Output Capacitance (V CB = – .