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NUP4106 Dataheets PDF



Part Number NUP4106
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description 4 Channel TVS Protection Array
Datasheet NUP4106 DatasheetNUP4106 Datasheet (PDF)

NUP4106 Low Capacitance Surface Mount TVS for High-Speed Data Interfaces www.datasheet4u.com The NUP4106 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning. Features http://onsemi.com • SO−8 Package • Peak Power − 500 W 8 x 20 mS • ESD Rating: SO−8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.3 VOLTS PIN CONFIGURATION AND SCHEMATIC I/O 1 1 REF 1 2 REF 1 3 I/O 2 4 8 GND 7 I/O 4 6 I/O 3 5 GND • UL Flammabi.

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NUP4106 Low Capacitance Surface Mount TVS for High-Speed Data Interfaces www.datasheet4u.com The NUP4106 transient voltage suppressor is designed to protect equipment attached to high speed communication lines from ESD and lightning. Features http://onsemi.com • SO−8 Package • Peak Power − 500 W 8 x 20 mS • ESD Rating: SO−8 LOW CAPACITANCE VOLTAGE SUPPRESSOR 500 WATTS PEAK POWER 3.3 VOLTS PIN CONFIGURATION AND SCHEMATIC I/O 1 1 REF 1 2 REF 1 3 I/O 2 4 8 GND 7 I/O 4 6 I/O 3 5 GND • UL Flammability Rating of 94 V−0 • This is a Pb−Free Device Typical Applications IEC 61000−4−2 (ESD) 15 kV (air) 8 kV (contact) • • • • • • High Speed Communication Line Protection T1/E1 Secondary Protection T3/E3 Secondary Protection Analog Video Protection Base Stations I2C Bus Protection 8 MAXIMUM RATINGS Rating Peak Power Dissipation 8 x 20 mS @ TA = 25°C (Note 1) Junction and Storage Temperature Range Lead Solder Temperature − Maximum 10 Seconds Duration IEC 61000−4−2 Contact Air Symbol Ppk TJ, Tstg TL ESD Value 500 − 55 to +150 260 ±8 ±15 Unit W °C °C kV 1 SOIC−8 CASE 751 PLASTIC MARKING DIAGRAM 8 P4106 AYWWG G 1 A Y WW G = Assembly Location = Year = Work Week = Pb−Free Package Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Non−repetitive current pulse 8 x 20 mS exponential decay waveform Pin 2/3 to Pin 5/8 (Note: Microdot may be in either location) ORDERING INFORMATION Device NUP4106DR2G Package SO−8 (Pb−Free) Shipping† 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2009 February, 2009 − Rev. 0 1 Publication Order Number: NUP4106/D NUP4106 ELECTRICAL CHARACTERISTICS Characteristic Reverse Breakdown Voltage @ It = 1.0 mA Reverse Leakage Current @ VRWN = 3.3 V Maximum Clamping Voltage @ IPP = 1.0 A, 8 x 20 mS Maximum Clamping Voltage @ IPP = 10 A, 8 x 20 mS www.datasheet4u.com Maximum Clamping Voltage @ IPP = 25 A, 8 x 20 mS Between I/O Pins and Ground @ VR = 0 V, 1.0 MHz Between I/O Pins @ VR = 0 Volts, 1.0 MHz Symbol VBR IR VC VC VC Capacitance Capacitance Min 5.0 N/A N/A N/A N/A − − Typ − − − − − 8.0 4.0 Max − 5.0 7.0 10 15 15 − Unit V mA V V V pF pF ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol IPP VC VRWM IR VBR IT IF VF Ppk C Parameter Maximum Reverse Peak Pulse Current Clamping Voltage @ IPP Working Peak Reverse Voltage Maximum Reverse Leakage Current @ VRWM Breakdown Voltage @ IT Test Current Forward Current Forward Voltage @ IF Peak Power Dissipation Capacitance @ VR = 0 and f = 1.0 MHz VC VBR VRWM IF I IR VF IT V IPP Uni−Directional TVS *See Application Note AND8308/D for detailed explanat.


STP200N6F3 NUP4106 C1251


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