FDMA6023PZT

FDMA6023PZT Dual P-Channel PowerTrench® MOSFET February 2009 FDMA6023PZT www.datasheet4u.com Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 mΩ Features „ Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A „ Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A „ Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A „ Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A „ Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin „ HBM ESD protection level > 2.4 kV typical (Note 3) „ RoHS Compliant „ Free from halogenated compounds and antimony oxides General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal performance for it’s physical size and is well suited to linear mode applications. Applications „ Battery protection „ Battery management „ Load switch Pin 1 S1 G1 D2 S1 1 Q1 6 D1 D1 D2 G1 D2 2 3 Q2 5 4 G2 S2 D1 MicroFET 2x2 G2 S2 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage -Continuous -Pulsed Power Dissipation Power Dissipation TA = 25 °C TA = 25 °C (Note 1a) (Note 1b) TA = 25 °C...