IRLS3036-7PPBF

PD -97148 IRLS3036-7PPbF HEXFET® Power MOSFET www.datasheet4u.com Applications l DC Motor Drive l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching G l Hard Switched and High Frequency Circuits Benefits l Optimized for Logic Level Drive l Very Low RDS(ON) at 4.5V VGS l Superior R*Q at 4.5V VGS l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free D S VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 60V 1.5m: 1.9m: 300Ac 240A D S G S S S S D2Pak 7 Pin G D S Gate Drain Max. 300c 210 240 1000 380 2.5 ± 16 8.1 -55 to + 175 300 300 See Fig. 14, 15, 22a, 22b Source Units A Absolute Maximum Ratings Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current d Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery f Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) W W/°C V V/ns °C Avalanche Characteristics EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy e Avalanche Current d Repetitive Avalanche Energy d mJ A mJ Thermal Resistance Symbol RθJC RθJA Par...