Document
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Rev. 01 — 20 April 2009
www.datasheet4u.com
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD123W small and flat lead Surface-Mounted Device (SMD) plastic package.
1.2 Features
I I I I I I Average forward current: IF(AV) ≤ 1 A Reverse voltage: VR ≤ 30 V Low forward voltage High power capability due to clip-bond technology AEC-Q101 qualified Small and flat lead SMD plastic package
1.3 Applications
I I I I I Low voltage rectification High efficiency DC-to-DC conversion Switch Mode Power Supply (SMPS) Reverse polarity protection Low power consumption applications
1.4 Quick reference data
Table 1. Quick reference data Tj = 25 °C unless otherwise specified. Symbol IF(AV) Parameter average forward current Conditions square wave; δ = 0.5; f = 20 kHz Tamb ≤ 120 °C Tsp ≤ 140 °C VR VF IR
[1]
[1]
Min
Typ
Max
Unit
-
405 15
1 1 30 450 50
A A V mV µA
reverse voltage forward voltage reverse current IF = 1 A VR = 30 V
Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
2. Pinning information
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Table 2. Pin 1 2
Pinning Description cathode anode
[1]
Simplified outline
Graphic symbol
1 2
sym001
1
2
[1]
The marking bar indicates the cathode.
3. Ordering information
Table 3. Ordering information Package Name PMEG3010BER Description plastic surface-mounted package; 2 leads Version SOD123W Type number
4. Marking
Table 4. Marking codes Marking code B8 Type number PMEG3010BER
5. Limiting values
Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol VR IF(AV) Parameter reverse voltage average forward current Conditions Tj = 25 °C square wave; δ = 0.5; f = 20 kHz Tamb ≤ 120 °C Tsp ≤ 140 °C IFSM Ptot non-repetitive peak forward current total power dissipation square wave; tp = 8 ms Tamb ≤ 25 °C
[2] [1]
Min -
Max 30
Unit V
-
1 1 50 0.57 0.95 1.8
A A A W W W
[3][4] [3][5] [3][1]
PMEG3010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 20 April 2009
2 of 13
NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
www.datasheet4u.co m Symbol
Parameter junction temperature ambient temperature storage temperature
Conditions
Min −55 −65
Max 150 +150 +150
Unit °C °C °C
Tj Tamb Tstg
[1] [2] [3] [4] [5]
Device mounted on a ceramic PCB, Al2O3, standard footprint. Tj = 25 °C prior to surge. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.
6. Thermal characteristics
Table 6. Symbol Rth(j-a) Thermal characteristics Parameter thermal resistance from junction to ambient Conditions in free air
[1][2] [3] [4] [5]
Min -
Typ -
Max 220 130 70 18
Unit K/W K/W K/W K/W
Rth(j-sp)
[1] [2] [3] [4] [5] [6]
thermal resistance from junction to solder point
[6]
For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. Reflow soldering is the only recommended soldering method. Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. Device mounted on a ceramic PCB, Al2O3, standard footprint. Soldering point of cathode tab.
PMEG3010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 20 April 2009
3 of 13
NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
www.datasheet4u.com
Zth(j-a) (K/W) 102 duty cycle = 1 0.5 0.25 0.1 10 0.02 0.05 0.01 0.75 0.33 0.2
103
006aab362
1
0
10−1 10−3
10−2
10−1
1
10
102 tp (s)
103
FR4 PCB, standard footprint
Fig 1.
103 Zth(j-a) (K/W) 102
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aab363
duty cycle = 1 0.5 0.25 0.75 0.33 0.2 0.05 0.02 0.01
10
0.1
1
0
10−1 10−3
10−2
10−1
1
10
102 tp (s)
103
FR4 PCB, mounting pad for cathode 1 cm2
Fig 2.
Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMEG3010BER_1
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 01 — 20 April 2009
4 of 13
NXP Semiconductors
PMEG3010BER
1 A low VF MEGA Schottky barrier rectifier
www.datasheet4u.com
Zth(j-a) (K/W) 102 1 0.75 0.5 0.25 10 0.1 0.02 1 0 0.33 0.2 0.05 0.01 duty cycle =
103
006aab364
10−1 10−3
10−2
10−1
1
10
102 tp (s)
103
Ceramic PCB, Al2O3, standard footprint
.