BF1214

BF1214 Dual N-channel dual gate MOSFET Rev. 01 — 30 October 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description The BF1214 is a combination of two dual gate MOSFET amplifiers with shared source and gate2 leads. The source and substrate are interconnected. Internal bias circuits enable DC stabilization and a very good cross modulation performance during AGC. Integrated diodes between the gates and source protect against excessive input voltage surges. The transistor has a SOT363 micro-miniature plastic package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I Two low noise gain controlled amplifiers in a single package; both with a partly integrated bias I Superior cross modulation performance during AGC I High forward transfer admittance I High forward transfer admittance to input capacitance ratio I Both amplifiers optimized for VHF applications, yet suitable for VHF and UHF applications 1.3 Applications I Gain controlled low noise amplifiers for VHF and UHF applications with 5 V supply voltage N digital and analog television tuners N professional communication equipment NXP Semiconductors BF1214 Dual N-channel dual gate MOSFET 1.4 Quick reference data www.datasheet4u.com Table 1. VDS ID Ptot |yfs| Ciss(G1) Crss NF Xmod Quick reference data for amplifier A and B Conditions DC DC Tsp ≤ 107 °C f = 100 MHz; Tj = 25 °C; ID = 18 mA f = 100 MHz f = 4...