High power NPN epitaxial planar bipolar transistor
Description
2STC5948
www.datasheet4u.com
High power NPN epitaxial planar bipolar transistor
Features
■ ■ ■ ■ ■
High breakdown voltage VCEO = 250 V Complementary to 2STA2120 Fast-switching speed Typical ft = 25 MHz Fully characterized at 125 oC
3 2 1
Applications
■
Audio power amplifier
TO-3P
Description
The device is a NPNtransistor manufactured using new BiT-LA...
