High power NPN epitaxial planar bipolar transistor
Description
2STC5200
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High power NPN epitaxial planar bipolar transistor
Features
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High breakdown voltage VCEO > 230V Complementary to 2STA1943 Fast-switching speed Typical fT = 30 MHz
3
Application
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Audio power amplifier
1
2
TO-264
Description
This device is a NPNtransistor manufactured using new BiT-LA (Bipolar Transistor for linea...
