High power NPN epitaxial planar bipolar transistor
Description
2STC4468
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High power NPN epitaxial planar bipolar transistor
General features
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Preliminary data
High breakdown voltage VCEO=140V Complementary to 2STA1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC
3 2 1
Applications
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Audio power amplifier
TO-3P
Description
The device is a NPNtransistor manufact...
