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2STC4467

STMicroelectronics
Part Number 2STC4467
Manufacturer STMicroelectronics
Description High power NPN epitaxial planar bipolar transistor
Published May 31, 2009
Detailed Description 2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Compleme...
Datasheet PDF File 2STC4467 PDF File

2STC4467
2STC4467

Overview
2STC4467 High power NPN epitaxial planar bipolar transistor Features ■ High breakdown voltage VCEO = 120 V ■ Complementary to 2STA1694 ■ Fast-switching speed t(s)■ Typical ft = 20 MHz c■ Fully characterized at 125 oC roduApplications P■ Audio power amplifier leteDescription soThe device is a NPN transistor manufactured busing new BiT-LA (Bipolar transistor for linear Oamplifier) technology.
The resulting transistor Obsolete Product(s) -shows good gain linearity behaviour.
3 2 1 TO-3P Figure 1.
Internal schematic diagram Table 1.
Device summary Order code Marking Package Packaging 2STC4467 2STC4467 TO-3P Tube February 2009 Rev 3 1/8 www.
st.
com 8 Electrical ratings 1 Electri...


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