GT40Q323

GT40Q323 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40Q323 Voltage Resonance Inverter Switching Application www.datasheet4u.com Unit: mm Enhancement-mode High speed: tf = 0.14 μs (typ.) (IC = 40A) FRD included between emitter and collector 4th generation TO-3P (N) (Toshiba package name) Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current Pulsed collector current Diode forward current Collector power dissipation Junction temperature Storage temperature range DC Pulsed @ Tc = 100°C @ Tc = 25°C @ Tc = 100°C @ Tc = 25°C Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 1200 ±25 20 39 80 10 80 80 200 150 −55 to 150 Unit V V A A A JEDEC JEITA TOSHIBA ― ― 2-16C1C W °C °C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristics Thermal resistance (IGBT) Thermal resistance (di...