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IRFB17N50L Dataheets PDF



Part Number IRFB17N50L
Manufacturers Vishay Siliconix
Logo Vishay Siliconix
Description Power MOSFET
Datasheet IRFB17N50L DatasheetIRFB17N50L Datasheet (PDF)

IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.28 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Low trr.

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IRFB17N50L, SiHFB17N50L Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 130 33 59 Single 0.28 D TO-220AB G S D G ORDERING INFORMATION Package Lead (Pb)-free SnPb S N-Channel MOSFET FEATURES • Low Gate Charge Qg results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Available RoHS* COMPLIANT • Fully Characterized Capacitance and Avalanche Voltage and Current • Low trr and Soft Diode Recovery • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Switch Mode Power Supply (SMPS) • Uninterruptible Power Supply • High Speed Power Switching • ZVS and High Frequency Circuit • PWM Inverters TO-220AB IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single Pulse Avalanche Energyb Repetitive Avalanche Currenta Repetitive Avalanche Energya Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C EAS IAR EAR PD dV/dt Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) for 10 s TJ, Tstg Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Starting TJ = 25 °C, L = 3.0 mH, Rg = 25 , IAS = 16 A (see fig. 12). c. ISD  16 A, dI/dt  347 A/μs, VDD  VDS, TJ  150 °C. d. 1.6 mm from case. LIMIT 500 ± 30 16 11 64 1.8 390 16 22 220 13 - 55 to + 150 300d 10 1.1 UNIT V A W/°C mJ A mJ W V/ns °C lbf · in N·m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 62 0.56 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 9.9 Ab VDS = 50 V, ID = 9.9 Ab 500 - - V - 0.6 - V/°C 3.0 - 5.0 V - - ± 100 nA - - 50 μA - - 2.0 mA - 0.28 0.32  11 - - S Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Output Capacitance Coss Effective Output Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM VGS = 0 V, - VDS = 25 V, - f = 1.0 MHz, see fig. 5 - VGS = 0 V VDS = 1.0 V , f = 1.0 MHz - VGS = 0 V VDS = 400 V , f = 1.0 MHz - VGS = 0 V VDS = 0 V to 400 Vc - - VGS = 10 V ID = 16 A, VDS = 400 V, see fig. 6 and 13b - - - VDD = 250 V, ID = 16 A, - Rg = 7.5 , see fig. 10b - - MOSFET symbol showing the D - integral reverse G p - n junction diode - S 2760 - 325 - 37 - pF 3690 - 84 - 159 - - 130 - 33 nC - 59 21 - 51 - ns 50 - 28 - - 16 A - 64 Body Diode Voltage VSD TJ = 25 °C, IS = 16 A, VGS = 0 Vb - - 1.5 V Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge TJ = 25 °C - 170 250 trr ns TJ = 125 °C IF = 16 A, dI/dt = 100 A/μsb - 220 330 TJ = 25 °C - 470 710 Qrr nC TJ = 125 °C - 810 1210 Reverse Recovery Current IRRM - 7.3 11 A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width  300 μs; duty cycle  2 %. www.vishay.com 2 Document Number: 91098 S11-0514-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFB17N50L, SiHFB17N50L Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 100 10 Top Bottom VGS.


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