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IRFS17N20DPBF Dataheets PDF



Part Number IRFS17N20DPBF
Manufacturers International Rectifier
Logo International Rectifier
Description HEXFET Power MOSFET
Datasheet IRFS17N20DPBF DatasheetIRFS17N20DPBF Datasheet (PDF)

PD- 95325 www.datasheet4u.com SMPS MOSFET IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET® Power MOSFET l l Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.17Ω ID 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB17N20D D2Pak IRFS17N20D TO-262 IRFSL17N20D Absolute Maximu.

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PD- 95325 www.datasheet4u.com SMPS MOSFET IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET® Power MOSFET l l Applications High frequency DC-DC converters Lead-Free VDSS 200V RDS(on) max 0.17Ω ID 16A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l TO-220AB IRFB17N20D D2Pak IRFS17N20D TO-262 IRFSL17N20D Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ‡ Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw† Max. 16 12 64 3.8 140 0.90 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Units A W W/°C V V/ns °C Typical SMPS Topologies l Telecom 48V input Forward Converter Notes  through … are on page 11 www.irf.com 1 6/1/04 IRFB/IRFS/IRFSL17N20DPbF Static @ TJ = 25°C (unless otherwise specified) www.datasheet4u.com Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Min. 5.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– Typ. ––– 33 8.4 16 11 19 18 6.6 1100 190 44 1340 76 130 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA † 0.17 Ω VGS = 10V, ID = 9.8A „ 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 9.8A 50 ID = 9.8A 13 nC VDS = 160V 24 VGS = 10V, „† ––– VDD = 100V ––– ID = 9.8A ns ––– R G = 5.1Ω ––– VGS = 10V „ ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz † ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V … Dynamic @ TJ = 25°C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy‚† Avalanche Current Repetitive Avalanche Energy Typ. ––– ––– ––– Max. 240 9.8 14 Units mJ A mJ Thermal Resistance Parameter RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface † Junction-to-Ambient† Junction-to-Ambient‡ Typ. ––– 0.50 ––– ––– Max. 1.1 ––– 62 40 Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton 2 Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) † Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 16 ––– ––– showing the A G integral reverse ––– ––– 64 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 9.8A, VGS = 0V „ ––– 160 240 ns TJ = 25°C, IF = 9.8A ––– 900 1350 nC di/dt = 100A/µs „ Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com IRFB/IRFS/IRFSL17N20DPbF www.datasheet4u.com 100 VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 100 I D , Drain-to-Source Current (A) 10 1 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP 10 0.1 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 10 100 5.0V 1 0.1 0.01 0.1 20µs PULSE WIDTH TJ = 175 ° C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.5 R DS(on) , Drain-to-Source On Resistance (Normalized) ID = 16A I D , Drain-to-Source Current (A) 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 TJ = 175 ° C 10 TJ = 25 ° C 1 0.1 5.0 V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 VGS = 10V 20 40 60 80 100 120 140 160 180 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFB/IRFS/IRFSL17N20DPbF www.datasheet4u.com 10000 20 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + Cgd ID = 9.8A VDS = 160V VDS = 100V VDS = 40V 16 C, Capacitance (pF) 1000 Ciss 12 Coss 100 8 Crss 4 10 1 10 100 1000 0 FOR TEST CIRCUIT SEE FIGURE 13 0 10 20 30 40 50 VDS, Drain-to-Source Voltage (V) QG , Tota.


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