Document
PD- 95325
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SMPS MOSFET
IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF
HEXFET® Power MOSFET
l l
Applications High frequency DC-DC converters Lead-Free
VDSS
200V
RDS(on) max
0.17Ω
ID
16A
Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current
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TO-220AB IRFB17N20D
D2Pak IRFS17N20D
TO-262 IRFSL17N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
16 12 64 3.8 140 0.90 ± 30 2.7 -55 to + 175 300 (1.6mm from case ) 10 lbf•in (1.1N•m)
Units
A W W/°C V V/ns °C
Typical SMPS Topologies
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Telecom 48V input Forward Converter
Notes
through
are on page 11
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6/1/04
IRFB/IRFS/IRFSL17N20DPbF
Static @ TJ = 25°C (unless otherwise specified)
www.datasheet4u.com Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 200 ––– ––– 3.0 ––– ––– ––– ––– Min. 5.3 ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– ––– Typ. ––– 0.25 ––– ––– ––– ––– ––– ––– Typ. ––– 33 8.4 16 11 19 18 6.6 1100 190 44 1340 76 130 Max. Units Conditions ––– V VGS = 0V, ID = 250µA ––– V/°C Reference to 25°C, ID = 1mA 0.17 Ω VGS = 10V, ID = 9.8A 5.5 V VDS = VGS, ID = 250µA 25 VDS = 200V, VGS = 0V µA 250 VDS = 160V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V Max. Units Conditions ––– S VDS = 50V, ID = 9.8A 50 ID = 9.8A 13 nC VDS = 160V 24 VGS = 10V, ––– VDD = 100V ––– ID = 9.8A ns ––– R G = 5.1Ω ––– VGS = 10V ––– VGS = 0V ––– VDS = 25V ––– pF ƒ = 1.0MHz ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 160V, ƒ = 1.0MHz ––– VGS = 0V, VDS = 0V to 160V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff.
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
––– ––– –––
Max.
240 9.8 14
Units
mJ A mJ
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient
Typ.
––– 0.50 ––– –––
Max.
1.1 ––– 62 40
Units
°C/W
Diode Characteristics
IS
ISM
VSD trr Qrr ton
2
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol 16 ––– ––– showing the A G integral reverse ––– ––– 64 S p-n junction diode. ––– ––– 1.3 V TJ = 25°C, IS = 9.8A, VGS = 0V ––– 160 240 ns TJ = 25°C, IF = 9.8A ––– 900 1350 nC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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IRFB/IRFS/IRFSL17N20DPbF
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100
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
100
I D , Drain-to-Source Current (A)
10
1
I D , Drain-to-Source Current (A)
VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V BOTTOM 5.0V TOP
10
0.1
5.0V
20µs PULSE WIDTH TJ = 25 °C
1 10 100
5.0V
1 0.1
0.01 0.1
20µs PULSE WIDTH TJ = 175 ° C
1 10 100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100
3.5
R DS(on) , Drain-to-Source On Resistance (Normalized)
ID = 16A
I D , Drain-to-Source Current (A)
3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0
TJ = 175 ° C
10
TJ = 25 ° C
1
0.1 5.0
V DS = 50V 20µs PULSE WIDTH 6.0 7.0 8.0 9.0 10.0
VGS = 10V
20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature ( °C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFB/IRFS/IRFSL17N20DPbF
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10000
20
VGS , Gate-to-Source Voltage (V)
VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd Coss = C ds + Cgd
ID = 9.8A VDS = 160V VDS = 100V VDS = 40V
16
C, Capacitance (pF)
1000
Ciss
12
Coss
100
8
Crss
4
10 1 10 100 1000
0
FOR TEST CIRCUIT SEE FIGURE 13
0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V)
QG , Tota.