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APTGT300DA170D3 Dataheets PDF



Part Number APTGT300DA170D3
Manufacturers Advanced Power Technology
Logo Advanced Power Technology
Description IGBT Power Module
Datasheet APTGT300DA170D3 DatasheetAPTGT300DA170D3 Datasheet (PDF)

APTGT300DA170D3 Trench IGBT Power Module Boost chopper ® www.datasheet4u.com VCES = 1700V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inducta.

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APTGT300DA170D3 Trench IGBT Power Module Boost chopper ® www.datasheet4u.com VCES = 1700V IC = 300A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat 3 Q2 6 7 1 2 3 4 5 7 6 2 1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operation Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C A V W 600A@1600V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT300DA170D3 – Rev 0 January, 2004 Parameter Collector - Emitter Breakdown Voltage Max ratings 1700 530 300 600 ±20 1470 Unit V APTGT300DA170D3 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage www.datasheet4u.com ICES Zero Gate Voltage Collector Current VCE(on) VGE(th) IGES Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Collector Emitter on Voltage Gate Threshold Voltage Gate – Emitter Leakage Current All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Test Conditions VGE = 0V, IC = 8mA VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 300A Tj = 125°C VGE = VCE , IC = 12 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 300A RG = 4.7Ω Min 1700 Typ Max 8 2.4 6.4 400 Unit V mA V V nA 5.2 2.0 2.4 5.8 Dynamic Characteristics Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn Off Energy Min Typ 26 0.9 280 100 850 120 330 100 1000 200 95 Max Unit nF ns ns mJ Reverse diode ratings and characteristics Symbol Characteristic VF Er Qrr Diode Forward Voltage Reverse Recovery Energy Reverse Recovery Charge Test Conditions IF = 300A VGE = 0V IF = 300A VR = 900V di/dt =900A/µs IF = 300A VR = 900V di/dt =900A/µs Min Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Typ 1.8 1.9 35 70 75 125 Max 2.2 Unit V mJ µC Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t .


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