LE28FV4001R

Ordering number : EN*5468 CMOS LSI LE28FV4001M, T, R-20/25 4MEG (52488 × 8 Bits) Flash Memory Preliminary Overview The LE28FV4001M, T, R Series are 4 MEG flash memory products that feature a 542488-word × 8-bit organization and 3.3 V single-voltage power supply operation. CMOS peripheral circuits were adopted for high speed, low power, and ease of use. The LE28FV4001M also supports high-speed data rewriting by providing a sector (256 bytes) erase function. Package Dimensions unit: mm 3205-SOP32 [LE28FV4001M. T, R] Features Highly reliable 2 layer polysilicon CMOS flash EEPROM process Read and write operations using a 3.3 V single-voltage power supply High-speed access: 200 and 250 ns Low power — Operating (read): 10 mA (maximum) — Standby: 20 µA (maximum) Highly reliable read write —Number of sector write cycles: 104 cycles — Data retention: 10 years Address and data latches Sector erase function: 256 bytes per sector Self-timer erase/program Byte program time: 35 µs (maximum) Write complete detection function: Toggle bit/Data poling Hardware and software data protection functions Pin assignment conforms to the JEDEC byte-wide EEPROM standard. Package SOP 32-pin (525 mil) plastic package: LE28FV4001M TSOP 42-pin (10 × 14 mm) plastic package:LE28FV4001T TSOP 40-pin (10 × 14 mm) plastic package: LE28FV4001R SANYO: SOP32 unit: mm 3087A-TSOP40 [LE28FV4001M. T, R] SANYO: TSOP40 (TYPE-I) These FLASH MEMORY products incorporate technology licensed f...