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APTGT200DU60TG

Microsemi Corporation

Dual common source Trench Field Stop IGBT Power Module

APTGT200DU60TG Dual common source Trench + Field Stop IGBT® www.datasheet4u.com Power Module C1 Q1 G1 C2 VCES = 600V IC...


Microsemi Corporation

APTGT200DU60TG

File Download Download APTGT200DU60TG Datasheet


Description
APTGT200DU60TG Dual common source Trench + Field Stop IGBT® www.datasheet4u.com Power Module C1 Q1 G1 C2 VCES = 600V IC = 200A @ Tc = 80°C Application AC Switches Switched Mode Power Supplies Uninterruptible Power Supplies Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - Lead frames for power connections High level of integration Internal thermistor for temperature monitoring Benefits Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant Max ratings 600 290 200 400 ±20 625 400A @ 550V Unit V A June, 2006 1-6 APTGT200DU60TG – Rev 1 Q2 G2 E1 E2 NTC1 E NTC2 G2 E2 C2 C1 E C2 E1 G1 E2 G2 NTC2 NTC1 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C V W Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Foll...




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