APTGT200DH60G

APTGT200DH60G Asymmetrical - Bridge Trench + Field Stop IGBT® www.datasheet4u.com Power Module VBUS Q1 G1 CR3 VCES = 600V IC = 200A @ Tc = 80°C Application Welding converters Switched Mode Power Supplies Switched Reluctance Motor Drives Features Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration Benefits Stable temperature behavior Very rugged Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile RoHS Compliant E1 OUT1 OUT2 Q4 G4 CR2 E4 0/VBUS OUT1 G1 E1 VBUS 0/VBUS E4 G4 OUT2 Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 150°C Reverse Bias Safe Operating Area 400A @ 550V These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT200DH6G – Rev 1 June, 2006 Max ratings 600 290 200 400 ±20 625 Unit V A V W APTGT200DH60G All r...