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PD85035S-E

Part Number	PD85035S-E
Manufacturer	STMicroelectronics
Description	RF POWER transistor
Published	May 26, 2009
Detailed Description	PD85035-E PD85035S-E www.datasheet4u.com RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral ...
Datasheet	PD85035S-E PDF File

Overview

PD85035-E PD85035S-E www.
datasheet4u.
com RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Target Specification Features ■ ■ ■ ■ ■ ■ Excellent thermal stability Common source configuration POUT = 35W with 14.
9dB gain @ 870MHz / 13.
6V Plastic package ESD protection In compliance with the 2002/93/EC european directive PowerSO-10RF (formed lead) Description The PD85035-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor.
It is designed for high gain, broadband commercial and industrial applications.
It operates at 13.
6V in common source mode at frequencies of up to 1 GHz.
PD85035-E boasts the excellent gain, linearity...

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PD85035S-E RF POWER transistor - STMicroelectronics

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