PBSS4350SPN

PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Rev. 01 — 5 April 2007 www.datasheet4u.com Product data sheet 1. Product profile 1.1 General description NPN/PNP double low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Package NXP PBSS4350SPN SOT96-1 Name SO8 NPN/NPN complement PBSS4350SS PNP/PNP complement PBSS5350SS Type number 1.2 Features I I I I I Low collector-emitter saturation voltage VCEsat High collector current capability IC and ICM High collector current gain (hFE) at high IC High efficiency due to less heat generation Smaller required Printed-Circuit Board (PCB) area than for conventional transistors 1.3 Applications I I I I Complementary MOSFET driver Half and full bridge motor drivers Dual low power switches (e.g. motors, fans) Automotive 1.4 Quick reference data Table 2. Quick reference data Conditions open base single pulse; tp ≤ 1 ms IC = 2 A; IB = 200 mA [1] Symbol Parameter TR1; NPN low VCEsat transistor VCEO IC ICM RCEsat collector-emitter voltage collector current peak collector current collector-emitter saturation resistance Min - Typ 90 Max 50 2.7 5 130 Unit V A A mΩ NXP Semiconductors PBSS4350SPN 50 V, 2.7 A NPN/PNP low VCEsat (BISS) transistor Quick reference data …continued Conditions open base single pulse; tp ≤ 1 ms IC = −2 A; IB = −200 mA [1] Table 2. www.datasheet4u.com Symbol Parameter TR2; PNP low VCEsat transistor VCEO IC...