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STTH10002
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Ultrafast recovery diode
Main product characteristics
IF(AV) VRRM Tj (max) VF (typ) trr (typ) 2 x 50 A 200 V 150° C 0.72 V 30 ns
A1
K1
A1
K2
Features and benefits
■ ■ ■ ■
A2
K2
A1 K1
K1
A2
A1 K2
Very low forward losses Low recovery time High surge current capability Insulated – Insulating voltage = 2500 Vrms – Capacitance = 45 pF
A2 K2
K1 A2
Description
The STTH10002 is a dual rectifier suited for welding equipment, and high power industrial applications. Packaged in ISOTOP, this device is intended for use in the secondary rectification of power converters.
ISOTOP STTH10002TV1
ISOTOP STTH10002TV2
Order codes
Part Number STTH10002TV1 STTH10002TV2 Marking STTH10002TV1 STTH10002TV2
April 2006
Rev 1
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Characteristics
STTH10002
1
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Characteristics
Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)
Parameter Repetitive peak reverse voltage RMS forward current Average forward current, δ = 0.5 Surge non repetitive forward current Storage temperature range Maximum operating junction temperature Per diode Per diode Tc = 100° C Per device Tc = 95° C tp = 10 ms Sinusoidal 750 -55 to + 175 150 A °C °C Value 200 150 50 Unit V A A
Table 1.
Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj
Table 2.
Symbol Rth(j-c) Rth(c)
Thermal parameters
Parameter Per diode Junction to case Total Coupling 0.55 0.1 ° C/W Value 1 Unit
When the two diodes 1 and 2 are used simultaneously: ∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c) Table 3.
Symbol IR(1)
Static electrical characteristics
Parameter Reverse leakage current Test conditions Tj = 25° C Tj = 125° C Tj = 25° C VR = VRRM IF = 50 A IF = 100 A IF = 100 A IF = 50 A IF = 100 A 0.90 0.72 0.86 Min. Typ Max. 50 µA 50 500 1 1.15 1.0 0.80 0.97 V Unit
VF(2)
Forward voltage drop
Tj = 125° C Tj = 150° C
1. Pulse test: tp = 5 ms, δ < 2 % 2. Pulse test: tp = 380 µs, δ < 2 %
To evaluate the conduction losses use the following equation: P = 0.63 x IF(AV) + 0.0034 IF2(RMS)
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STTH10002 Table 4.
Symbol
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Characteristics Dynamic characteristics
Parameter Test conditions IF = 1 A, dIF/dt = -50 A/µs, VR = 30 V, Tj = 25 °C IF = 1 A, dIF/dt = -200 A/µs, VR = 30 V, Tj = 25 °C Min. Typ 53 30 10 180 1.6 Max. 65 37 13 A ns V Unit ns
trr
Reverse recovery time
IRM tfr VFP
Reverse recovery current Forward recovery time Forward recovery voltage
IF = 50 A, dIF/dt = 200 A/µs, VR = 160 V, Tj = 125 °C IF = 50 A, dIF/dt = 200 A/µs VFR = 1.1 x VFmax, Tj = 25 °C IF = 50 A, dIF/dt = 200 A/µs, Tj = 25 °C
Figure 1.
Peak current versus duty cycle
Figure 2.
Forward voltage drop versus forward current (typical values, per diode)
IM(A)
600
T
IM
IFM(A)
300
500
d=tp/T δ
tp
250
400
P = 100 W
200
300
P = 60 W
150
Tj=150°C
200
P = 30 W
100
100
50
Tj=25°C
δ
0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Figure 3.
Forward voltage drop versus forward current (maximum values, per diode)
Figure 4.
Relative variation of thermal impedance, junction to case, versus pulse duration
IFM(A)
300
Zth(j-c)/Rth(j-c)
1.0
Single pulse ISOTOP
250
200
150
100
Tj=150°C
50
Tj=25°C
VFM(V) 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
tp(s) 0.1 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01
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Characteristics
STTH10002
Figure 5.
Junction capacitance versus reverse applied voltage (typical values)
F=1MHz Vosc=30mVRMS Tj=25°C
Figure 6.
Reverse recovery charges versus dIF/dt (typical values)
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C(pF)
450 400 350 300 250 200 150 100
VR(V)
QRR(nC)
IF = 50 A VR=160 V
Tj=125 °C
Tj=25 °C
50 0
dIF/dt(A/µs) 10 100 1000
100 1 10 100 1000
Figure 7.
tRR(ns)
120 110 100 90 80 70 60 50 40 30 20 10 0 10
Reverse recovery time versus dIF/dt Figure 8. (typical values)
IRM(A)
20
IF= 50 A VR= 160 V
IF= 50 A VR=160V
Peak reverse recovery current versus dIF/dt (typical values)
16
Tj=125 °C
12
Tj=125 °C
Tj=25 °C
8
4
dIF/dt(A/µs)
0
Tj=25 °C
dIF/dt(A/µs) 1000
100
1000
10
100
Figure 9.
Dynamic parameters versus junction temperature
QRR; IRM [T j] / Q RR; IRM [T j=125°C]
1.4 1.2 1.0 0.8 0.6
QRR IRM IF= 50 A VR=160V
0.4 0.2 Tj(°C) 0.0 25 50 75 100 125 150
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STTH10002
Ordering information scheme
2
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Ordering information scheme
STTH 100 02 TVx
Ultrafast switching diode Average forward current 100 = 100 A Repetitive peak reverse voltage 02 = 200 V Package TVx = ISOTOP
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Package information
STTH10002
3
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Package information
Table 5. ISOTOP dimensions
DIMENSIONS REF.
E G2
Millimeters Min. Max. 12.20 9.10 8.20 0.85 2.05 38.20 31.70 25.50 24.15
Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951
C
A
A
11.80 8.90 7.8 0.75 1.95 37.80 31.50 25.15 23.85
A1
A1 C2 E2 F1 F
B C C2 D D1
P1
E E1
D
S
G
D1
E2 G
24.80 typ. 14.90 12.60 3.50 4.10 4.60 4.00 4.00 30.10 15.10 12.80 4.30 4.30.