Zener Diode Silicon Epitaxial Type
CRY62~CRZ47
TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62~CRZ47
www.datasheet4u.com
Use in Communication, Automatio...
Description
CRY62~CRZ47
TOSHIBA Zener Diode Silicon Epitaxial Type
CRY62~CRZ47
www.datasheet4u.com
Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors
l Average power dissipation: P = 0.7 W l Zener voltage: VZ = 6.2~47 V l Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name)
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 700 −40 ~ 150 −40 ~ 150 Unit mW °C °C
Standard Soldering Pad
Unit: mm 1.2 1.2 2.8
JEDEC JEITA TOSHIBA
― ― 3-2A1A
Weight: 0.013 g (typ.)
1
2002-08-29
CRY62~CRZ47
Marking
CRY62~CRY91
Lot No.
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Following Indicates the Date of Manufacture
0 Month of manufacture Year of manufacture January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture
1
2
3
4
6
2
5
6
7
8
9
Type Code (e.g., CRY62) Cathode mark
CRZ10~CRZ47
Lot No. Month of manufacture Year of manufacture Type Code (e.g., CRZ10) Cathode mark January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture 5 6 7 8 9 0 1 2 3 4
10
2
2002-08-29
CRY62~CRZ47
Electrical Characteristics (Ta = 25°C)
Zener Voltage Zener Impedance rd (Ω) Measurement Current IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 Temperature Coefficient of Zener Voltage αT (mV / °C) Typ. 2 3 4 4 5 6 7 8 9 ...
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