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CRY75 Dataheets PDF



Part Number CRY75
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Zener Diode Silicon Epitaxial Type
Datasheet CRY75 DatasheetCRY75 Datasheet (PDF)

CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 www.datasheet4u.com Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors l Average power dissipation: P = 0.7 W l Zener voltage: VZ = 6.2~47 V l Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj .

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CRY62~CRZ47 TOSHIBA Zener Diode Silicon Epitaxial Type CRY62~CRZ47 www.datasheet4u.com Use in Communication, Automation and Measurement Equipment Constant Voltage Regulation Transient Suppressors l Average power dissipation: P = 0.7 W l Zener voltage: VZ = 6.2~47 V l Suitable for compact assembly due to small surface-mount package “S−FLATTM” (Toshiba package name) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Power dissipation Junction temperature Storage temperature range Symbol P Tj Tstg Rating 700 −40 ~ 150 −40 ~ 150 Unit mW °C °C Standard Soldering Pad Unit: mm 1.2 1.2 2.8 JEDEC JEITA TOSHIBA ― ― 3-2A1A Weight: 0.013 g (typ.) 1 2002-08-29 CRY62~CRZ47 Marking CRY62~CRY91 Lot No. www.datasheet4u.com Following Indicates the Date of Manufacture 0 Month of manufacture Year of manufacture January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture 1 2 3 4 6 2 5 6 7 8 9 Type Code (e.g., CRY62) Cathode mark CRZ10~CRZ47 Lot No. Month of manufacture Year of manufacture Type Code (e.g., CRZ10) Cathode mark January to December are denoted by letter A to L respectively. Last decimal digit of the year of manufacture 5 6 7 8 9 0 1 2 3 4 10 2 2002-08-29 CRY62~CRZ47 Electrical Characteristics (Ta = 25°C) Zener Voltage Zener Impedance rd (Ω) Measurement Current IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 Temperature Coefficient of Zener Voltage αT (mV / °C) Typ. 2 3 4 4 5 6 7 8 9 11 12 14 16 18 20 23 25 26 28 30 33 38 Max 3 4 5 6 8 9 11 13 14 17 19 23 26 28 32 36 40 41 45 48 53 60 Forward Voltage VF (V) Measure -ment Current IF (A) 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 IR (µA) Reverse Current Measurement Voltage VR (V) 3.0 3.0 4.5 4.9 5.5 6.0 7.0 8.0 9.0 10.0 11.0 13.0 14.0 16.0 17.0 19.0 21.0 26.4 28.8 31.2 34.4 37.6 Product No. www.datasheet4u.com Min CRY62 CRY68 CRY75 CRY82 CRY91 CRZ10 CRZ11 CRZ12 CRZ13 CRZ15 CRZ16 CRZ18 CRZ20 CRZ22 CRZ24 CRZ27 CRZ30 CRZ33 CRZ36 CRZ39 CRZ43 CRZ47 5.6 6.2 6.8 7.4 8.2 9.0 9.9 10.8 11.7 13.5 14.4 16.2 18.0 19.8 21.6 24.3 27.0 29.7 32.4 35.1 38.7 42.3 VZ (V) Typ. 6.2 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 Max 6.8 7.4 8.3 9.0 10.0 11.0 12.1 13.2 14.3 16.5 17.6 19.8 22.0 24.2 26.4 29.7 33.0 36.3 39.6 42.9 47.3 51.7 Measurement Current IZ (mA) 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 9 8 7 6 Max 60 60 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 30 35 40 65 Max 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 Max 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 3 2002-08-29 CRY62~CRZ47 Ta max – P 160 140 PRSM – tW 1000 Non-repetitive peak reverse power dissipation PRSM (W) Maximum allowable ambient temperature Ta max (°C) Device mounted on a glass-epoxy board Soldering land: 6 mm ´ 6 mm 500 300 PRSM www.datasheet4u.com 100 80 60 40 20 0 0 120 100 50 30 Recommended tW Rectangular pulse Ta = 25°C 10 5 3 0.01 0.03 0.1 0.3 1 3 10 0.2 0.4 0.6 0.8 1.0 Power dissipation P (W) Pulse width tW (ms) =T – VZ 25 CRY62~CRZ27 (typ.) 40 CRZ30~CRZ47 =T – VZ (typ.) Temperature coefficient of zenner voltage =T (mV/°C) 20 Temperature coefficient of zenner voltage =T (mV/°C) 4 8 12 16 20 24 28 35 15 10 30 5 0 0 25 26 30 34 38 42 46 50 Zenner voltage VZ (V) Zenner voltage VZ (V) rth (j-a) – t 10000 (1) Device mounted on a ceramic board Soldering land: 2 mm ´ 2 mm 1000 (2) Device mounted on a glass-epoxy board Soldering land: 6 mm ´ 6 mm Transient thermal impendance rth (j-a) (°C/W) 100 (2) (1) 10 1 0.001 0.01 0.1 1 10 100 Time t (s) 4 2002-08-29 CRY62~CRZ47 www.datasheet4u.com RESTRICTIONS ON PRODUCT USE 000707EAA · TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither inte.


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