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LE28C1001T-15 Dataheets PDF



Part Number LE28C1001T-15
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description 1MEG (131072 words x 8 bits) Flash Memory
Datasheet LE28C1001T-15 DatasheetLE28C1001T-15 Datasheet (PDF)

Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting. Package Dimensions unit: mm 3205-SOP32 [LE28C1001M] Features .

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Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG (131072 words × 8 bits) Flash Memory Preliminary Overview The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS peripheral circuits are adopted for high speed, low power dissipation, and ease of use. A 128-byte page rewrite function provides rapid data rewriting. Package Dimensions unit: mm 3205-SOP32 [LE28C1001M] Features • Highly reliable 2-layer polysilicon CMOS flash EEPROM process • Read and write operations using a 5 V single-voltage power supply • Fast access time: 90, 120, and 150 ns • Low power dissipation — Operating current (read): 30 mA (maximum) — Standby current: 20 µA (maximum) • Highly reliable read/write — Erase/write cycles: 104/103 cycles — Data retention: 10 years • Address and data latches • Fast page rewrite operation — 128 bytes per page — Byte/page rewrite time: 5 ms (typical) — Chip rewrite time: 5 s (typical) • Automatic rewriting using internally generated Vpp • Rewrite complete detection function — Toggle bit — Data polling • Hardware and software data protection functions • All inputs and outputs are TTL compatible. • Pin assignment conforms to the JEDEC byte-wide EEPROM standard. • Package SOP 32-pin (525 mil) plastic package : LE28C1001M TSOP 32-pin (8 × 20 mm)plastic package : LE28C1001T SANYO: SOP32 unit: mm 3224-TSOP32 [LE28C1001T] SANYO: TSOP32 (TYPE-I) These FLASH MEMORY products incorporate technology licensed Silicon Storage Technology, Inc. SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN D3096HA (OT)/N3095HA (OT) No. 5129-1/14 LE28C1001M, T-90/12/15 Block Diagram Pin Assignments A05759 A05760 Pin Functions Symbol A16 to A0 Address input Pin Function Supply the memory address to these pins. The address is latched internally during a write cycle. These pins output data during a read cycle and input data during a write cycle. Data is latched internally during a write cycle. Outputs go to the high-impedance state when either OE or CE is high. The device is active when CE is low. When CE is high, the device becomes unselected and goes to the standby state. Makes the data output buffers active. OE is an active-low input. Makes the write operation active. WE is an active-low input. Apply 5 V (±10%) to this pin. DQ7 to DQ0 Data input and output CE OE WE VCC VSS N.C. Chip enable Output enable Write enable Power supply Ground No connection These pins must be left open. No. 5129-2/14 LE28C1001M, T-90/12/15 Function Logic Mode Read Write Standby Write inhibit Software chip erase (5 V, single voltage) CE VIL VIL VIH X X VIL OE VIL VIH X VIL X VIH WE VIH VIL X X VIH VIL AIN AIN X X X AIN A16 to A10 = VIL, A8 to A1 = VIL, A9 = 12 V, A0 = VIL A16 to A10 = VIL, A8 to A1 = VIL, A9 = 12 V, A0 = VIH A16 to A0 DOUT DIN High-Z High-Z/DOUT High-Z/DOUT DIN Manufacturer code (BF) DQ7 to DQ0 Product identification VIL VIL VIH Device code (07) Software Data Protection Command Byte sequence Write 0 Write 1 Write 2 Write 3 Write 4 Write 5 Note: Address format A14 to A0 (hex.) Set protection Address 5555 2AAA 5555 Data AA 55 A0 Reset protection Address 5555 2AAA 5555 5555 2AAA 5555 Data AA 55 80 AA 55 20 Software Chip Erase Command (5 V single-voltage power supply) Byte sequence Write 0 Write 1 Write 2 Write 3 Write 4 Write 5 Address 5555 2AAA 5555 5555 2AAA 5555 Data AA 55 80 AA 55 10 Note: Address format A14 to A0 (hex.) Software Product ID Entry Command and Exit Command Codes Byte sequence Write 0 Write 1 Write 2 Write 3 Write 4 Write 5 Protect ID Entry Address 5555 2AAA 5555 5555 2AAA 5555 Data AA 55 80 AA 55 60 Protect ID Exit Address 5555 2AAA 5555 Data AA 55 F0 Notes on software Product ID Command Code: 1. Command Code Address format: A14 to A0 (hex.) 2. With A14 to A1 = VIL, Manufacturer Code is read with A0 = VIL to be BFH LE28C1001M, T series Device Code is read with A0 = VIH to be 07H 3. The device does not remain in Software Product ID Mode if powered down. 4. A16 and A15 are VIH or VIL. No. 5129-3/14 LE28C1001M, T-90/12/15 Device Operation This Sanyo 1 MEG flash memory allows electrical rewrites using a 5 V single-voltage power supply. The LE28C1001M, T series products are pin and function compatible with the industry standards for this type of product. Read The LE28C1001M, T series read operations are controlled by CE and OE. The host must set both pins to the low level to acquire the output data. CE is used for chip selection. When CE is at the high level, the chip will be in the unselected state and only draw the standby current. OE is used for output control. The output pins go to the high-impedance state when either CE or OE is high. See the timing waveforms (Figure 1) for details. Page Write Operation The write operation starts when both CE and WE are at the low level, and furthermore OE is at .


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