NS50N

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package www.datasheet4u.com ·Complement to type NS50P APPLICATIONS ·For medium power linear amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION NS50N ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Pulse Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2 150 -65~150 Open emitter Open base Open collector CONDITIONS VALUE 60 60 5 6 10 2 65 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA; IB=0 IC=6A; IB=0.6A IC=6A ; VCE=4V VCE=60V; VEB=0 VCE=30V; IB=0 VEB=5V; IC=0 IC=0.3A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 50 15 3 MIN 60 TYP. www.datasheet4u.com NS50N SYMBOL VCEO(SUS) VCE(sat) VBE ICES ICEO IEBO hFE-1 hFE-2 fT MAX UNIT V 1.5 2.0 0.4 0.7 1.0 160 V V mA mA mA MHz hFE-1 Classifications A 50-100 B 80-160 2 SavantIC Semiconductor Product Specification Silicon NPN Power Trans...