MJW16206

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ·With TO-247 package www.datasheet4u.com ·High voltage ,high speed ·Low collector saturation voltage APPLICATIONS ·Designed for use in horizontal deflection circuits for high and very high resolution, monochrome and color CRT monitors PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJW16206 Fig.1 simplified outline (TO-247) and symbol ABSOLUTE MAXIMUM RATINGS(Tc=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature TC=25 TC=100 CONDITIONS Open emitter Open base Open collector VALUE 1200 500 8 12 15 5.0 10 150 39 150 -55~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case VALUE 0.67 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA; IB=0 IE=1.0mA; IC=0 IC=3A...