MJE181

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJE180/181/182 www.datasheet4u.com DESCRIPTION ·With TO-126 package ·Complement to type MJE170/171/172 APPLICATIONS ·For low power audio amplifier and low current high speed switching applications PINNING (see Fig.2) PIN 1 2 3 Emitter Collector;connected to mounting base Base DESCRIPTION ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER MJE180 VCBO Collector-base voltage MJE181 MJE182 MJE180 VCEO Collector-emitter voltage MJE181 MJE182 VEBO IC ICM IB PC Ti Tstg Emitter-base voltage Collector current Collector current-peak Base current Ta=25 Collector power dissipation TC=25 Junction temperature Storage temperature 12.5 150 -65~150 Open collector Open base Open emitter CONDITIONS VALUE 60 80 100 40 60 80 7 3 6 1 1.5 W V A A A V V UNIT SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER MJE180 V(BR)CEO Collector-emitter breakdown voltage MJE181 MJE182 VCE(sat)-1 VCE(sat)-2 VCE(sat)-3 VBE(sat)-1 VBE(sat)-2 VBE Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Base-emitter on voltage MJE180 ICBO Collector cut-off current MJE181 MJE182 IEBO hFE-1 hFE-2 hFE-3 fT COB Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance IC=500mA ;IB=50mA IC...