BUX37

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX37 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High breakdown voltage ·DARLINGTON APPLICATIONS ·Power switching ·Automotive ignition ·Solenoid drivers ·Series and shunt regulators. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature TC1100 CONDITIONS Open emitter Open collector VALUE 400 7 15 4 35 -65~150 -65~150 UNIT V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN TYP. www.datasheet4u.com BUX37 SYMBOL MAX UNIT VCEO(SUS) V(BR)EBO VCEsat-1 VCEsat-2 VBEsat ICBO ICEO hFE-1 hFE-2 Collector-emitter sustaining voltage IC=0.1A; IB=0 IE=50mA; IC=0 IC=7 A;IB=0.07 A IC=10 A;IB=0.15A IC=10 A;IB=0.15A VCB=400V;IE=0 VCE=400V;IB=0 IC=8A ; VCE=5V IC=15A ; VCE=5V 400 V Emitter-base breakdown voltage 7 V Collector-emitter saturation voltage 1.5 V Collector-emitter saturation voltage 2.0 V Base-emitter saturation voltage 2.7 V Collector cut-off current 0.1 mA Collector cut-off current 0.25 mA DC c...