BUW24

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUW24 www.datasheet4u.com DESCRIPTION ·With TO-3 package ·High dielectric strength ·Short switching time APPLICATIONS ·Suitable for use in clocked voltatge converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION MAXIMUN RATINGS SYMBOL VCBO VCEO VEBO IC IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature Tmb,25 Open emitter Open base Open collector CONDITIONS VALUE 450 350 7 10 3 100 150 -65~150 UNIT V V V A A W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case VALUE 1.25 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=10mA ; IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=450V; IE=0 VEB=7V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V 10 15 MIN 350 www.datasheet4u.com BUW24 SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 TYP. MAX UNIT V 0.8 1.5 0.1 0.1 80 V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A IB1=- IB2=0.5A RL=10< 2.0 4.0 1.2 µs µs µs 2 ...