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CMT70N03 Dataheets PDF



Part Number CMT70N03
Manufacturers ETC
Logo ETC
Description N-CHANNEL LOGIC LEVEL POWER MOSFET
Datasheet CMT70N03 DatasheetCMT70N03 Datasheet (PDF)

CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION Buck Converter High Side Switch Other Applications www.datasheet4u.com FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve RDS(ON) Typ. 6.6mΩ ID 71A Inductive Switching Curves Improved UIS Ruggedness VDSS 30V PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current - Continuous Tc = 25℃, VGS.

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CMT70N03 N-CHANNEL Logic Level Power MOSFET APPLICATION Buck Converter High Side Switch Other Applications www.datasheet4u.com FEATURES Low ON Resistance Low Gate Charge Peak Current vs Pulse Width Curve RDS(ON) Typ. 6.6mΩ ID 71A Inductive Switching Curves Improved UIS Ruggedness VDSS 30V PIN CONFIGURATION TO-252 SYMBOL D Front View GATE SOURCE DRAIN G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Source Voltage (Note 1) Drain to Current - Continuous Tc = 25℃, VGS@10V (Note 2) - Continuous Tc = 100℃, VGS@10V (Note 2) - Pulsed Tc = 25℃, VGS@10V (Note 3) Gate-to-Source Voltage - Continue Total Power Dissipation Derating Factor above 25℃ Peak Diode Recovery dv/dt (Note 4) Operating Junction and Storage Temperature Range Single Pulse Avalanche Energy Maximum Lead Temperature for Soldering Purposes Maximum Package Body for 10 seconds dv/dt TJ, TSTG EAS TL TPKG Symbol VDSS ID ID IDM VGS PD Value 30 71 45 284 ±20 66 0.53 3.0 -55 to 150 TBD 300 260 V W W/℃ V/ns ℃ mJ ℃ ℃ Unit V A THERMAL RESISTANCE Symbol RθJC RθJA RθJA Parameter Junction-to-case Junction-to-ambient (PCB Mount) Junction-to-ambient Min Typ Max 1.9 50 62 Units ℃/W ℃/W ℃/W Test Conditions Water cooled heatsink, PD adjusted for a peak junction temperature of +150℃ Minimum pad area, 2-oz copper, FR-4 circuit board, double sided 1 cubic foot chamber, free air 2004/04/13 Champion Microelectronic Corporation Page 1 CMT70N03 N-CHANNEL Logic Level Power MOSFET ORDERING INFORMATION Part Number CMT70N03 www.datasheet4u.com Package TO-252 ELECTRICAL CHARACTERISTICS Unless otherwise specified, TJ = 25℃. CMT70N03 Characteristic OFF Characteristics Drain-to-Source Breakdown Voltage (VGS = 0 V, ID = 250 µA) Breakdown Voltage Temperature Coefficient, (Reference to 25℃, ID = 1mA) Drain-to-Source Leakage Current (VDS = 30 V, VGS = 0 V, TJ = 25℃) (VDS = 24 V, VGS = 0 V, TJ = 125℃) Gate-to-Source Forward Leakage (VGS = 20 V) Gate-to-Source Reverse Leakage (VGS = -20 V) ON Characteristics Gate Threshold Voltage, (VDS = VGS, ID = 250 µA) Static Drain-to-Source On-Resistance, (VGS = 10 V, ID = 15A) (VGS = 4.5 V, ID = 12A) Forward Transconductance (VDS = 20V, ID = 12A) Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge (VGS = 10 V) Total Gate Charge (VGS = 4.5 V) Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Body Diode ) Pulse Source Current (Body Diode) Forward On-Voltage Forward Turn-On Time Reverse Recovery Charge (IS = 12 A, VGS = 0 V) (IF = 12 A, VGS = 0 V, di/dt = 100A/µs) (Note 5) Integral pn-diode in MOSFET(Note 2) ISM VSD trr Qrr 30 40 284 1.0 A V ns nC (VDS = 15 V, ID = 12 A) (Note5, 6) (Note 5) Dynamic Characteristics (VDS = 15 V, VGS = 0 V, f = 1.0 MHz) Ciss Coss Crss Qg Qg Qgs Qgd Resistive Switching Characteristics (VDD = 15 V, ID = 15 A, VGS = 10 V, RG = TBDΩ) (Note 5,6) td(on) tr td(off) tf IS TBD TBD TBD TBD 71 ns ns ns ns A 2600 480 230 50 25 7.5 8.5 pF pF pF nC nC nC nC gFS (Note 5) RDS(on) 6.6 12 30 S 8.0 mΩ VGS(th) 1.0 3.0 V IGSS -100 nA IGSS IDSS 1 10 100 nA µA ΔVDSS/∆TJ 0.05 V/℃ VDSS 30 V Symbol Min Typ Max Units Source-Drain Diode Characteristics 2004/04/13 Champion Microelectronic Corporation Page 2 CMT70N03 N-CHANNEL Logic Level Power MOSFET Note 1: TJ = +25℃ to 150℃ Note 2: Current is calculated based upon maximum allowable junction temperature. Package current limitation is 30A. Note 3: Repetitive rating; pulse width limited by maximum junction temperature. Note 4: ISD = 12.0A, di/dt <200A/µs, VDD


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