DatasheetsPDF.com

BUV48B Dataheets PDF



Part Number BUV48B
Manufacturers SavantIC
Logo SavantIC
Description SILICON POWER TRANSISTOR
Datasheet BUV48B DatasheetBUV48B Datasheet (PDF)

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV48B www.datasheet4u.com DESCRIPTION ·With TO-3PN package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Designed for switching and industrial applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitte.

  BUV48B   BUV48B


Document
SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV48B www.datasheet4u.com DESCRIPTION ·With TO-3PN package. ·High voltage. ·Fast switching speed. APPLICATIONS ·Designed for switching and industrial applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Base current Base current-peak Total power dissipation Junction temperature Storage temperature tp<5ms TC=25 tp<5ms Open emitter Open base Open collector CONDITIONS VALUE 1200 600 7 15 30 4 20 125 150 -65~150 UNIT V V V A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-case PARAMETER Thermal resistance junction case MAX 1.0 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUV48B CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Emitter-base sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=100mA; IB=0 IC=6A; IB=1.5A IC=10A; IB=4A IC=6A; IB=1.5A IC=10A; IB=4A VCE=1200V ;VBE=0 T=125°C VCE=600V; IC=0 VEB=6V; IC=0 IC=1A ; VCE=5V 15 MIN 600 1.5 3 1.5 2 0.5 3 1 1 50 TYP. MAX UNIT V V V V V mA mA mA SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES ICEO IEBO hFE Switching times: ton ts tf Turn-on time Storage time Fall time IC=6A; IB1=- IB2=1.5A VCC=250V 0.5 1.5 0.2 1.0 3.0 0.7 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE www.datasheet4u.com BUV48B Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 .


BUV47A BUV48B BUV48C


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)